FDS89141 mosfet equivalent, dual n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
* Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
* .
* Synchronous Rectifier
* Primary Switch For Bridge Topology
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
D2 5
D2 6
Q2
D.
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